 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2159 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2159 is an N-channel vertical type MOS FET featuring an operating voltage as low as 1.5 V. Because it can be driven on a low voltage and it is not necessary to consider driving current, the 2SK2159 is suitable for driving actuators of low-voltage portable systems such as headphone stereo sets and camcorders. 0.8 MIN. PACKAGE DIMENSIONS (in millimeters) 4.5 0.1 1.6 0.2 4.0 0.25 2.5 0.1 1.5 0.1 1 0.42 0.06 2 3 FEATURES * Capable of drive gate with 1.5 V * Small RDS(on) RDS(on) = 0.7 MAX. @VGS = 1.5 V, ID = 0.1 A RDS(on) = 0.3 MAX. @VGS = 4.0 V, ID = 1.0 A 0.47 1.5 0.06 3.0 0.42 0.06 0.41+0.03 -0.05 EQUIVALENT CIRCUIT 2 3 Gate protection diode 1 Internal diode PIN CONNECTION 1. Source (S) 2. Drain (D) Marking: NW 3. Gate (G) ABSOLUTE MAXIMUM RATINGS (TA = 25 C) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) SYMBOL VDSS VGSS ID(DC) ID(pulse) PW 10 ms, Duty Cycle 50 % Mounted on 16 cm2 x 0.7 mm ceramic substrate. VGS = 0 VDS = 0 TEST CONDITIONS RATINGS 60 14 2.0 4.0 UNIT V V A A Total Power Dissipation Channel Temperature Storage Temperature PT Tch Tstg 2.0 150 -55 to +150 W C C Document No. D11235EJ2V0DS00 (2nd edition) Date Published June 1996 P Printed in Japan (c) 1996 2SK2159 ELECTRICAL CHARACTERISTICS (TA = 25 C) PARAMETER Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Drain to Source On-state Resistance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf VDD = 25 V, ID = 1.0 A VGS(on) = 3 V, RG = 10 RL = 25 TEST CONDITIONS VDS = 60 V, VGS = 0 VGS = 14 V, VDS = 0 VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 1.0 A VGS = 1.5 V, ID = 0.1 A VGS = 2.5 V, ID = 1.0 A VGS = 4.0 V, ID = 1.0 A VDS = 10 V, VGS = 0, f = 1.0 MHz 0.5 0.4 0.55 0.27 0.22 319 109 22 38 128 237 130 0.7 0.5 0.3 0.9 MIN. TYP. MAX. 1.0 10 1.1 UNIT A A V S pF pF pF ns ns ns ns 2 2SK2159 TYPICAL CHARACTERISTICS (TA = 25 C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 10 5 dT - Derating Factor - % FORWARD BIAS SAFE OPERATING AREA Single pulse 1 80 ID - Drain Current - A m s 2 1 0.5 DC 60 10 PW = m s 40 10 0 m s 20 0.2 30 60 90 120 150 0.1 1 2 5 10 20 50 100 0 TA - Ambient Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 5 10 VDS - Drain to Source Voltage - V TRANSFER CHARACTERISTICS VDS = 10 V 4 ID - Drain Current - A 3 V 5 VV 3. 3.0 .5 V 2V 7 0 2. ID - Drain Current - A 1 TA = 75 C 25 C -25 C 1.5 V 2 0.1 1 VGS = 1.0 V 0 0.4 0.8 1.2 1.6 2.0 0.01 0.001 0 1 2 3 VDS - Drain to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT |yfs| - Forward Transfer Admittance - S VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 TA = 75 C 25 C -25 C VGS = 1.5 V 10 VDS = 10 V 1 TA = -25 C 25 C 75 C 0.1 0.01 0.001 0.01 0.1 1 ID - Drain Current - A RDS(on) - Drain to Source On-State Resistance - ID - Drain Current - A 3 2SK2159 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1.4 VGS = 2.5 V 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 TA = 75 C 25 C -25 C 0.1 1 10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1.4 VGS = 4.0 V 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 TA = 75 C 25 C -25 C 0.1 1 10 RDS(on) - Drain to Source On-State Resistance - ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1 Ciss, Coss, Crss - Capacitance - pF 0.8 1 000 500 RDS(on) - Drain to Source On-State Resistance - ID - Drain Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE RDS(on) - Drain to Source On-State Resistance - Ciss 200 100 50 Coss 0.6 0.4 ID = 2 A 0.2 ID = 1 A 0 2 4 6 8 10 12 14 20 VGS = 0 f = 1 MHz 10 1 2 Crss 5 10 20 50 100 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V SOURCE TO DRAIN DIODE FORWARD VOLTAGE 10 ISD - Source to Drain Current - A SWITCHING CHARACTERISTICS 1 000 td(on), tr, td(off), tf - Switching Time - ns 500 td(off) tr tf td(on) VDD = 25 V VGS(on) = 3 V RG = 10 0.2 0.5 1 2 5 10 ID - Drain Current - A 1 200 100 50 0.1 0.01 20 10 0.1 0.001 0.4 0.6 0.8 1.0 1.2 VSD - Source to Drain Voltage - V 4 2SK2159 REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Document No. TEI-1202 IEI-1209 C10535E MEI-1202 X10679E 5 2SK2159 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 |
Price & Availability of 2SK2159
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |